Solution-Based Synthesis of Few-Layer WS2 Large Area Continuous Films for Electronic Applications

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作者
Omar A. Abbas
Ioannis Zeimpekis
He Wang
Adam H. Lewis
Neil P. Sessions
Martin Ebert
Nikolaos Aspiotis
Chung-Che Huang
Daniel Hewak
Sakellaris Mailis
Pier Sazio
机构
[1] Optoelectronics Research Centre,
[2] University of Southampton,undefined
[3] National Centre for Advanced Tribology,undefined
[4] University of Southampton,undefined
[5] School of Electronics and Computer Science,undefined
[6] University of Southampton,undefined
[7] Skolkovo Institute of Science and Technology Novaya St.,undefined
[8] 100,undefined
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摘要
Unlike MoS2 ultra-thin films, where solution-based single source precursor synthesis for electronic applications has been widely studied, growing uniform and large area few-layer WS2 films using this approach has been more challenging. Here, we report a method for growth of few-layer WS2 that results in continuous and uniform films over centimetre scale. The method is based on the thermolysis of spin coated ammonium tetrathiotungstate ((NH4)2WS4) films by two-step high temperature annealing without additional sulphurization. This facile and scalable growth method solves previously encountered film uniformity issues. Atomic force microscopy (AFM) and transmission electron microscopy (TEM) were used to confirm the few-layer nature of WS2 films. Raman and X-Ray photoelectron spectroscopy (XPS) revealed that the synthesized few-layer WS2 films are highly crystalline and stoichiometric. Finally, WS2 films as-deposited on SiO2/Si substrates were used to fabricate a backgated Field Effect Transistor (FET) device for the first time using this precursor to demonstrate the electronic functionality of the material and further validate the method.
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