Laser forming of silicon films using nanoparticle precursor

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作者
Sachin Bet
Aravinda Kar
机构
[1] University of Central Florida,Laser
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Silicon nanoparticles; laser crystallization; SEM; differential scanning calorimetry (DSC); Raman spectroscopy; laser doping; Schottky diode;
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摘要
Polycrystalline silicon films containing cubic silicon crystallites of size 3–4 µm have been formed on nickel substrates by fusing and sintering silicon nanoparticle precursors using a laser. A mechanism for the fusion and sintering of these nanoparticles, resulting in reduced heat input and continuous film formation by surface and grain boundary diffusion, is discussed. Films were characterized by optical microscopy, scanning electron microscopy, energydispersive spectroscopy, and Raman spectroscopy. Films were doped with n- as well as p-type dopants by using a laser doping technique and their current-voltage (I–V) characteristics were measured.
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页码:993 / 1004
页数:11
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