The effect of (CeO2: PVC) thin interfacial film on the electrical features in Au/n-Si Schottky barrier diodes (SBDs) by using current–voltage measurements

被引:0
|
作者
Tohid Ganj
Seyed Mohammad Rozati
Yashar Azizian-Kalandaragh
Golamreza Pirgholi-Givi
Şemsettin Altındal
机构
[1] University of Guilan,Physics Department, Faculty of Sciences
[2] University of Mohaghegh Ardabili,Department of Physics
[3] Gazi University,Department of Physics, Faculty of Sciences
[4] Technical and Vocational University (TVU),Department of Physics
[5] University of Mohaghegh Ardabili,Department of Advanced Technologies
[6] Sabalan University of Advanced Technologies (SUAT),Department of Engineering Sciences
关键词
D O I
暂无
中图分类号
学科分类号
摘要
In this paper, the cerium-oxide nanostructures (CeO2) were synthesized by using the hydrothermal method, and then Au–Si (MS), Au-PVC-Si (MPS1), and Au-(CeO2:PVC)-Si (MPS2) SBDs were fabricated to investigate organic interlayer effects on the main electrical properties and conduction-mechanisms (CMs). The structural/optical properties of the CeO2 nanopowders were analyzed using XRD, SEM, EDX, and UV–Vis spectroscopy methods. The average crystallite size of the nanopowders was estimated by Scherrer and Williamson–Hall method as 30 and 40 nm, respectively. SEM images show the nanoclusters have average size of 400 nm and consist of sphericalnanoparticles with a 40 nm average size. Nanostructures bandgap was calculated using a UV–Vis absorbance spectrum that is equal to 3.93 eV which has a blueshift compared to its bulk value (Eg = 2.9 eV) due to the quantum confinement effect. The CMs of these diodes were investigated using I–V characteristics by utilizing thermionic emission (TE), Cheungs, and Norde methods. The energy distribution of surface state (Nss) was calculated from the forward bias IF–VF curve by considering voltage-dependent BH and n(V). The results show that polymeric interlayer can decrease Nss by 1–2 orders and as a result improved the performance of MPS compared to MS diodes. Experimental results show that the presence of the interlayer in MPS diodes improved the main electrical parameters of MPS diodes compared to MS diode and also increased its rectification by 7 times compared to MS diode. The CCMs (current-transport/conduction mechanisms) were also investigated from the Ln(IF)–Ln(VF) curves which have three regions for MPS diodes and show I α Vm relation. The field-reduction coefficient (β) was estimated from the reverse-bias Ln (IR)–√VR curves. While the CCM for MPS obeys the Poole–Frenkel emission and the MS diode obeys the Schottky emission (SE). Therefore, the polymer layer has changed the conduction mechanism of MPS diodes.
引用
收藏
相关论文
共 50 条
  • [1] The effect of (CeO2: PVC) thin interfacial film on the electrical features in Au/n-Si Schottky barrier diodes (SBDs) by using current-voltage measurements
    Ganj, Tohid
    Rozati, Seyed Mohammad
    Azizian-Kalandaragh, Yashar
    Pirgholi-Givi, Golamreza
    Altindal, Semsettin
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2023, 34 (08)
  • [2] The investigation of interlayer (CeO2:PVC) effects on the dielectric features of Au-Si (MS) Schottky barrier diodes (SBDs) using the impedance spectroscopy method
    Ganj, Tohid
    Rozati, S. M.
    Azizian-Kalandaragh, Yashar
    Pirgholi-Givi, Gholamreza
    PHYSICA SCRIPTA, 2023, 98 (05)
  • [3] Effect of interfacial layer on the forward current-voltage characteristics of Au/n-Si and Ni/n-Si Schottky diodes
    Sharma, R
    Padha, N
    Kumar, J
    PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2, 2002, 4746 : 926 - 930
  • [4] Electrical characterization of Au/ZnO/TiO2/n-Si and (Ni/Au)/ZnO/TiO2/n-Si Schottky diodes by using current-voltage measurements
    Kinaci, B.
    Asar, T.
    Cetin, S. S.
    Ozen, Y.
    Kizilkaya, K.
    JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2012, 14 (11-12): : 959 - 963
  • [5] The explanation of barrier height inhomogeneities in Au/n-Si Schottky barrier diodes with organic thin interfacial layer
    Tascioglu, Ilke
    Aydemir, Umut
    Altindal, Semsettin
    JOURNAL OF APPLIED PHYSICS, 2010, 108 (06)
  • [6] The effect of PVA (Bi2O3-doped) interfacial layer and series resistance on electrical characteristics of Au/n-Si (110) Schottky barrier diodes (SBDs)
    Gokcen, M.
    Tunc, T.
    Altindal, S.
    Uslu, I.
    CURRENT APPLIED PHYSICS, 2012, 12 (02) : 525 - 530
  • [7] Incorporation of chromium nanostructures into PVC interlayer to improve electrical features of Au/n-Si schottky diodes
    Yukselturk, E.
    Tanrikulu, E.
    PHYSICA SCRIPTA, 2025, 100 (01)
  • [8] A comparative study of the Au/n-Si (MS) and Au/(ZnO:CeO2:PVP)/n-Si (MPS) Schottky structures by using current/voltage characteristics in dark and under illumination
    Ustun, Oray
    Ozcelik, Ugur
    Azizian-Kalandaragh, Yashar
    Altindal, Semsettin
    Ozcelik, Suleyman
    PHYSICA SCRIPTA, 2024, 99 (09)
  • [9] Examination of Electrical and Dielectric Parameters of Au/n-Si Schottky Barrier Diodes (SBDs) with Organic Perylene Interlayer Using Impedance Measurements Under Various Illumination Intensities
    Bengi, S.
    Cetinkaya, H. G.
    Altindal, S.
    Zeyrek, S.
    JOURNAL OF ELECTRONIC MATERIALS, 2024, 53 (09) : 5606 - 5616
  • [10] Enhanced electrical parameters of the Au/n-Si Schottky barrier diodes with graphite/graphane oxide doped PVC interlayer
    Tascioglu, I
    Badali, Y.
    Altindal Yeriskin, S.
    PHYSICA SCRIPTA, 2024, 99 (08)