Performance enhancement of blue light-emitting diodes by adjusting the p-type doped last barrier

被引：0
|
作者：
Yan Lei
Zhiqiang Liu
Miao He
Zhi Li
Junjie Kang
Xiaoyan Yi
Junxi Wang
Jinmin Li
机构：
[1] South China Normal University,Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology
[2] Chinese Academy of Sciences,Center for Semiconductor Lighting
来源：
Applied Physics A | 2014年 / 115卷
关键词：
Internal Quantum Efficiency; Electron Leakage; Electron Block Layer; Light Output Power; Efficiency Droop;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Blue light-emitting diodes (LEDs) with different p-doping concentrations in the last barrier have been studied numerically. The energy band diagrams, carrier concentrations, internal quantum efficiency and light output power are investigated using APSYS software. The simulation results show that the LED structure with p-doping in the last barrier has a better hole-injection efficiency and confinement of electron leakage over the structure with the last undoped GaN barrier due to enhancement of the holes’ injection and the electrons’ confinement. As a result, the efficiency droop is markedly improved, and the light output power is greatly enhanced when a larger p-doping amount is centralised in the last barrier.
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收藏
页码：1115 / 1119
页数：4
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