Quantum-dot lasers: Principal components of the threshold current density

被引：0
|
作者：
S. V. Zaitsev
N. Yu. Gordeev
V. I. Kopchatov
A. M. Georgievskii
V. M. Ustinov
A. E. Zhukov
A. Yu. Egorov
A. R. Kovsh
N. N. Ledentsov
P. S. Kop’ev
Zh. I. Alfërov
D. Bimberg
机构：
[1] Russian Academy of Sciences,A. F. Ioffe Physicotechnical Institute
[2] Technische Universität Berlin,Institut für Festkörperphysik
来源：
Semiconductors | 1997年 / 31卷
关键词：
Recombination; Magnetic Material; Electromagnetism; Nonradiative Recombination; Threshold Current Density;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Injection heterolasers based on quantum dots grown by molecular-beam epitaxy have been investigated. It is shown that the room-temperature threshold current density can be lowered to 15 A/cm2 by decreasing the nonradiative recombination and increasing the degree of carrier localization. The density of states in structures with vertically coupled quantum dots was investigated by the electroabsorption method.
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收藏
页码：947 / 949
页数：2
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