Drift mobility of carriers in porous silicon

被引：0
|
作者：
N. S. Averkiev
L. P. Kazakova
É. A. Lebedev
N. N. Smirnova
机构：
[1] Russian Academy of Sciences,Ioffe Physicotechnical Institute
来源：
Semiconductors | 2001年 / 35卷
关键词：
Silicon; Activation Energy; Field Strength; Magnetic Material; Localize State;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The drift mobility of carriers in porous silicon has been studied in a wide temperature range (190–360 K) at electric field strengths of 2×103–3×104 V/cm. An exponential temperature dependence of the hole drift mobility with an activation energy of d ∼ 0.14 eV was established. The density of localized states controlling the transport is evaluated.
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页码：588 / 590
页数：2
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