Semiconductor saturable absorber mirror structures with low saturation fluence

被引：0
|
作者：
G. J. Spühler
K. J. Weingarten
R. Grange
L. Krainer
M. Haiml
V. Liverini
M. Golling
S. Schön
U. Keller
机构：
[1] Institute of Quantum Electronics,ETH Zurich, Physics Department
[2] GigaTera Product Group,Time
来源：
Applied Physics B | 2005年 / 81卷
关键词：
42.60.Fc; 78.67.Pt; 42.70.Nq;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We present two novel semiconductor saturable absorber mirror (SESAM) designs which can exhibit more than ten times lower saturation fluence than classical SESAM devices. Design considerations and characterization data are presented. These devices are particularly suited for passively mode-locked lasers with ultra-high repetition rates.
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页码：27 / 32
页数：5
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