Influences of hydrogen contents in precursor Si film to excimer laser crystallization

This paper presents for the first time experimental results which show a crucial role of the local Si–H bonding structures in Si precursors for crystallinity of polycrystalline silicon (p-Si), obtained by an excimer laser crystallization (ELC) process. This role was revealed in the distinct differences among (111) lattice plane spacings of p-Si according to deposition and dehydrogenation conditions of the precursors. It was also found that preablation behaviors, especially ebullition of the melt, are highly sensitive to the precursors. These results provide an important guide for the selection of the most adequate precursor in production, and also contribute an understanding of the mechanism of the ELC process.