Dependence of the permittivity of direct gap semiconductors on hydrostatic pressure

被引：0
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作者：
M. M. Gadzhaliev
M. I. Daunov
A. M. Musaev
机构：
[1] Russian Academy of Sciences,Amirkhanov Institute of Physics, Dagestan Research Center
来源：
Journal of Experimental and Theoretical Physics | 2015年 / 121卷
关键词：
Hydrostatic Pressure; InSb; Pressure Dependence; Hall Mobility; Shallow Donor;
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摘要：
The pressure dependence of permittivity χ of direct gap ZnO, CdTe, InSb, InAs, CdSnAs2, and CdGeAs2 semiconductors in the hydrostatic pressure range from zero to 1 GPa is determined from the results of quantitative analysis of the pressure dependences of resistivity ρ(P) and Hall constant RH(P). It is found that the dielectric constant decreases upon an increase in pressure so that coefficient (dχ/dP)/χ increases with (dEg/dP)/Eg.
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页码：263 / 266
页数：3
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