Study of the degradation of the external quantum efficiency of UV LEDs based on AlGaN/GaN heterostructures grown by chloride-hydride vapor-phase epitaxy

被引：0
|
作者：
N. M. Shmidt
A. S. Usikov
E. I. Shabunina
A. E. Chernyakov
A. V. Sakharov
S. Yu. Kurin
A. A. Antipov
I. S. Barash
A. D. Roenkov
Yu. N. Makarov
H. Helava
机构：
[1] Russian Academy of Sciences,Ioffe Physical Technical Institute
[2] Nitride Crystals Inc.,undefined
[3] St. Petersburg National Research University of Information Technologies,undefined
[4] Mechanics,undefined
[5] and Optics,undefined
[6] Nitride Crystals Group of Companies,undefined
来源：
Technical Physics Letters | 2014年 / 40卷
关键词：
Technical Physic Letter; External Quantum Efficiency; Indium Atom; Metal Organic Vapor Phase Epitaxy; Hydride Vapor Phase Epitaxy;
D O I：
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中图分类号：
学科分类号：
摘要：
Final stage of the degradation of the external quantum efficiency of AlGaN/GaN UV light-emitting diodes (LEDs), grown by chloride-hydride vapor-phase epitaxy, and high-power InGaN/GaN blue LEDs, produced by metal-organic vapor-phase epitaxy, has been comparatively studied. It is shown that one of these processes leading to a decrease in the quantum efficiency for both types of LEDs is the local defect formation involving the Gold-Weisberg mechanism in a system of extended defects. To prolong the service life of AlGaN/GaN UV LEDs to more than 2000 h, it is necessary to improve the nanostructural arrangement of the material of light-emitting structures and determine the contribution from the AlGaN composition disorder to the degradation of the external quantum efficiency.
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页码：574 / 577
页数：3
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