Effect of annealing on neutron-transmutation-doped GaN epilayers grown on sapphire substrates

被引：0
|
作者：
S. H. Park
T. W. Kang
T. W. Kim
机构：
[1] Dongguk University,Department of Physics
[2] Hanyang University,Advanced Semiconductor Research Center, Division of Electrical and Computer Engineering
来源：
Journal of Materials Science | 2004年 / 39卷
关键词：
Polymer; Sapphire; Sapphire Substrate;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：3217 / 3219
页数：2
相关论文
共 50 条
  • [1] Effect of annealing on neutron-transmutation-doped GaN epilayers grown on sapphire substrates
    Park, SH
    Kang, TW
    Kim, TW
    JOURNAL OF MATERIALS SCIENCE, 2004, 39 (09) : 3217 - 3219
  • [2] EFFECT OF ANNEALING AND HYDROGENATION ON NEUTRON-TRANSMUTATION-DOPED GAAS
    CHO, HD
    SHON, Y
    KANG, TW
    KIM, HJ
    SHIM, HS
    KIM, TW
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1994, 146 (02): : 603 - 611
  • [3] Hydrogenation and annealing effects on GaN epilayers grown on sapphire substrates
    Kang, T.W.
    Park, S.H.
    Cho, H.D.
    Kwak, M.Y.
    Eom, G.S.
    Kim, T.W.
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1998, 37 (08): : 4417 - 4418
  • [4] Hydrogenation and annealing effects on GaN epilayers grown on sapphire substrates
    Kang, TW
    Park, SH
    Cho, HD
    Kwak, MY
    Eom, GS
    Kim, TW
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (08): : 4417 - 4418
  • [5] ANNEALING STUDIES OF CZOCHRALSKI-GROWN NEUTRON-TRANSMUTATION-DOPED SILICON
    CLELAND, JW
    FUKUOKA, N
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (08) : C386 - C386
  • [6] ANNEALING CHARACTERISTICS OF NEUTRON-TRANSMUTATION-DOPED GERMANIUM
    PALAIO, NP
    PEARTON, SJ
    HALLER, EE
    JOURNAL OF APPLIED PHYSICS, 1984, 55 (06) : 1437 - 1443
  • [7] Athermal annealing of neutron-transmutation-doped silicon
    Grun, J
    Manka, CK
    Hoffman, CA
    Meyer, JR
    Glembocki, J
    Qadri, SB
    Skelton, EF
    Donnelly, D
    Covington, B
    SHOCK COMPRESSION OF CONDENSED MATTER - 1997, 1998, 429 : 981 - 984
  • [8] Influence of neutron irradiation parameter and annealing temperature on neutron-transmutation-doped heteroepitaxial GaN film
    Chung, Yueh-Chun
    Chao, Der-Sheng
    Liang, Jenq-Horng
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2024, 550
  • [9] Precipitates in GaN epilayers grown on sapphire substrates
    Kang, JY
    Ogawa, T
    JOURNAL OF MATERIALS RESEARCH, 1998, 13 (08) : 2100 - 2104
  • [10] Precipitates in GaN epilayers grown on sapphire substrates
    Junyong Kang
    Tomoya Ogawa
    Journal of Materials Research, 1998, 13 : 2100 - 2104
12345