Contribution of nanointerfaces to colossal permittivity of doped Ba(Ti,Sn)O3 ceramics

被引：0
|
作者：
Oleg V’yunov
Borys Reshytko
Anatolii Belous
Leonid Kovalenko
机构：
[1] V. I. Vernadskii Institute of General and Inorganic Chemistry of the NAS of Ukraine,
来源：
Applied Nanoscience | 2019年 / 9卷
关键词：
Semiconductor barium titanate; Colossal permittivity; Microstructure; Nanointerface at grain boundaries; Metal–dielectric nanointerface;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The microstructure, crystal chemical parameters and electrical–physical properties of samples of barium titanate-based dielectric and semiconductor ceramics were investigated in a wide frequency range. The contributions of different nanointerfaces to the permittivity of samples under investigation have been determined.
引用
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页码：767 / 773
页数：6
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