Full Band Monte Carlo Study for Two-Dimensional Hole Transport in Strained Si p-MOSFETs

被引：0
|
作者：
Hiroshi Nakatsuji
Yoshinari Kamakura
Kenji Taniguchi
机构：
[1] Osaka University,Department of Electronics and Information Systems
来源：
Journal of Computational Electronics | 2003年 / 2卷
关键词：
strained Si; hole mobility; pseudopotential; inversion layer;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Transport properties of the two-dimensional hole gas in inversion layer of strained Si/SiGe p-MOSFETs are investigated using the full-band Monte Carlo simulator based on the nonlocal pseudopotential calculation. The hole mobility is significantly enhanced by the strain in the case of Ge content of ≥20%. Moreover, we also present the high-field transport characteristics of 2D holes. In contrast to the low-field mobility, the hole saturation velocity does not significantly enhanced by the strain.
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页码：109 / 112
页数：3
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