Influence of the crystallographic orientation of a substrate on the nucleation, shape, and evolution of silicon pores during its electrochemical etching in hydrofluoric-acid solutions

被引：0

作者：

Abramova E.N. ^{[1
]}

Syrov Y.V. ^{[1
]}

Khort A.M. ^{[1
]}

Yakovenko A.G. ^{[1
]}

Prokhorov D.I. ^{[1
]}

机构：

[1] Lomonosov Moscow State University of Fine Chemical Technologies, Moscow

来源：

Journal of Surface Investigation | 2018年 / 12卷 / 02期

关键词：

Crystal-lattice symmetry; Electrochemical etching; Etching ion; Pore initiation; Pore orientation; Porous silicon;

D O I：

10.1134/S1027451018020027

中图分类号：

学科分类号：

摘要：

It is established that the crystallographic orientation of a single-crystal silicon substrate affects the nucleation, shape, and evolution of silicon pores during its electrochemical etching. The shape, spatial orientation, and initiation of silicon pores is demonstrated to depend on both the etchant-solution properties caused by an etching-ion structure and the Si lattice symmetry. © Pleiades Publishing Ltd and E.N. Abramova, Yu.V. Syrov, A.M. Khort, A.G. Yakovenko, D.I. Prokhorov, 2018.

引用

页码：217 / 221

页数：4

共 28 条

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