Piezoelectric effect in GaAs nanowires

被引：0
|
作者：
I. P. Soshnikov
Dm. E. Afanas’ev
V. A. Petrov
G. E. Cirlin
A. D. Bouravlev
Yu. B. Samsonenko
A. Khrebtov
E. M. Tanklevskaya
I. A. Seleznev
机构：
[1] Russian Academy of Sciences,St. Petersburg Academic University
[2] Russian Academy of Sciences,Nanotechnology Research and Education Center
[3] Russian Academy of Sciences,Ioffe Physical Technical Institute
[4] St. Petersburg State University,Institute for Analytical Instrumentation
[5] Oceanpribor Corporation,Physics Faculty
来源：
Semiconductors | 2011年 / 45卷
关键词：
GaAs; Sound Source; Piezoelectric Transducer; Piezoelectric Effect; Scan Ning Electron Microscopy;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The anomalous piezoelectric effect in GaAs nanowires was detected (the piezoelectric module d33 ≈ 26 pC/N). This result can be explained by the dominant content of the phase with the wurtzite-type crystal structure in GaAs nanowires and an increased pressing force on the contact layer.
引用
收藏
页码：1082 / 1084
页数：2
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