Analytic compact model of ballistic and quasi-ballistic transport for cylindrical gate-all-around MOSFET including drain-induced barrier lowering effect

被引：0
|
作者：
He Cheng
Shigeyasu Uno
Kazuo Nakazato
机构：
[1] Nagoya University,Department of Electrical Engineering and Computer Science, Graduate School of Engineering
[2] Ritsumeikan University,Department of Electrical and Electronic Engineering
[3] JST,undefined
[4] CREST,undefined
来源：
Journal of Computational Electronics | 2015年 / 14卷
关键词：
Ballistic and quasi-ballistic transport; Cylindrical GAA MOSFET; Compact model; The DIBL effect;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We propose an analytic compact model of drain current in the ballistic and quasi-ballistic modes for cylindrical gate-all-around MOSFETs incorporating drain-induced barrier lowering (DIBL) effect. The model is based on our previous work addressing an analytic compact model for all operation regions, where electrostatic potential profile along the channel has not been taken into account. In this paper, we introduce variation of electrostatic potential along the channel to model the DIBL effect in the subthreshold region. The resulting analytic compact model is tested against TCAD simulation, and good accuracy is demonstrated.
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页码：321 / 328
页数：7
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