Formation and some properties of chromium oxide nanolayers on semiconductors

被引：0
|
作者：
Ezhovskii Yu.K. [1 ]
Kholkin V.Yu. [1 ]
机构：
[1] St. Petersburg State Institute of Technology
来源：
Russ. Microelectr. | 2008年 / 6卷 / 356-362期
关键词：
Chromium oxides - GaAs surfaces - Nano layers - Semiconductor-insulator interface - Si surfaces - Technological conditions - Ultra-thin;
D O I：
10.1134/S1063739708060024
中图分类号：
学科分类号：
摘要：
Ultrathin chromium oxide layers (nanostructures) are synthesized by molecular laying (atomic layer deposition) on the (100)-oriented Si surface and the (100)- and (110)-oriented GaAs surfaces. The influence of technological conditions on the composition and basic regular trends in the formation of the layers is established. Some of the dielectric properties of the chromium oxide nanostructures and the quality of the semiconductor-insulator interface are assessed. © 2008 MAIK Nauka.
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页码：356 / 362
页数：6
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