Al-doped and pure ZnO thin films elaborated by sol–gel spin coating process for optoelectronic applications

被引：0
|
作者：
M. Maache
T. Devers
A. Chala
机构：
[1] Ziane Achour University,Department of Science of Matter
[2] University of Orleans,ICMN, IUT Chartres
[3] Mohamed Khider University,Department of Science of Matter
来源：
Semiconductors | 2017年 / 51卷
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摘要：
Pure and aluminum-doped zinc oxide thin films were grown by spin coating at room temperature. As a starting material, zinc acetate was used. The dopant source was aluminum nitrate; the dopant molar ratio was varied between 1 and 10%. Structural analysis reveals that all films consist of single hexagonal wurtzite phase ZnO, and a preferential orientation along c-axis. They have a homogeneous surface. The measurements show that the films are nanostructured. The transmittance is greater than 75% in the visible region. The band gap energy decreases with the addition of dopant (Al) in prepared thin films and the resistivity decreases significantly.
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页码：1604 / 1610
页数：6
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