Plasma-chemical polymerization in CH4-based mixtures containing various amounts of rare gases

被引:0
|
作者
I. V. Soldatova
V. A. Kotenev
机构
[1] Moscow State Industrial University,Frumkin Institute of Physical Chemistry and Electrochemistry
[2] Russian Academy of Sciences,undefined
关键词
Polymer Film; Glow Discharge; Discharge Tube; Electron Energy Distribu Tion Function; Glow Discharge Plasma;
D O I
暂无
中图分类号
学科分类号
摘要
For constant-current glow discharge in Ar + Ne + CH4 mixtures in a pressure range of 13–250 Pa and a discharge current range of 5–100 mA, the following characteristics were determined: gas temperature; longitudinal electric field intensity; radiation line intensities of Ne (3p → 3s) and Ar (4p → 4s) transitions; intensities of Hα, Hβ, and Hγ lines of Balmer series; concentrations of Ne, Ar, and H atoms in metastable and resonance states; concentration of atomic hydrogen; and growth rate of polymer films. The composition of the polymer films was analyzed with the use of infrared spectroscopy. Mathematical modeling of discharges under the selected conditions was carried out. The results of calculations were compared to the experimental data. The mechanism of processes that proceed in the glow discharge plasma is shown to depend strongly on the Ne-to-Ar concentration ratio, which results in the qualitative difference between the compositions of films that were grown at the same pressure and discharge current, as well as in the difference between the growth rates of the films.
引用
收藏
页码:179 / 183
页数:4
相关论文
共 49 条
  • [1] Plasma-chemical polymerization in CH4-based mixtures containing various amounts of rare gases
    Soldatova, I. V.
    Kotenev, V. A.
    PROTECTION OF METALS AND PHYSICAL CHEMISTRY OF SURFACES, 2012, 48 (02) : 179 - 183
  • [2] Macroscopic plasma-chemical approach to plasma polymerization of HMDSO and CH4
    Hegemann, D
    Schültz, U
    Fischer, A
    SURFACE & COATINGS TECHNOLOGY, 2005, 200 (1-4): : 458 - 462
  • [3] Inductively coupled plasma etching of HgCdTe using a CH4-based mixture
    Laffosse, E
    Baylet, J
    Chamonal, JP
    Destefanis, G
    Cartry, G
    Cardinaud, C
    JOURNAL OF ELECTRONIC MATERIALS, 2005, 34 (06) : 740 - 745
  • [4] Inductively coupled plasma etching of HgCdTe using a CH4-based mixture
    E. Laffosse
    J. Baylet
    J. P. Chamonal
    G. Destefanis
    G. Cartry
    C. Cardinaud
    Journal of Electronic Materials, 2005, 34 : 740 - 745
  • [5] Plasma-chemical Synthesis and Regeneration of Catalysts for CH4 Steam Conversion
    Gheorghi P. Vissokov
    Plasma Science & Technology, 2002, (06) : 1551 - 1558
  • [6] Plasma-Chemical Treatment of Process Gases with Low-Concentration Fluorine-Containing Components
    Park, H. S.
    Vaschenko, S. P.
    Kartaev, E. V.
    Batomunkuev, D. Yu
    PLASMA CHEMISTRY AND PLASMA PROCESSING, 2017, 37 (01) : 273 - 286
  • [7] Plasma-Chemical Treatment of Process Gases with Low-Concentration Fluorine-Containing Components
    H. S. Park
    S. P. Vaschenko
    E. V. Kartaev
    D. Yu. Batomunkuev
    Plasma Chemistry and Plasma Processing, 2017, 37 : 273 - 286
  • [8] Plasma-chemical promotion of catalysis for CH4dry reforming: unveiling plasma-enabled reaction mechanisms
    Sheng, Zunrong
    Kim, Hyun-Ha
    Yao, Shuiliang
    Nozaki, Tomohiro
    PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2020, 22 (34) : 19349 - 19358
  • [9] Kinetics of ignition of saturated hydrocarbons by nonequilibrium plasma:: CH4-containing mixtures
    Kosarev, I. N.
    Aleksandrov, N. L.
    Kindysheva, S. V.
    Starikovskaia, S. M.
    Starikovskii, A. Yu.
    COMBUSTION AND FLAME, 2008, 154 (03) : 569 - 586
  • [10] Simulation of the Polymerization Process on a Silicon Surface under Plasma-Chemical Etching in CF4/H-2
    Grigoryev, Yu. N.
    Gorobchuk, A. G.
    JOURNAL OF SURFACE INVESTIGATION, 2015, 9 (01): : 184 - 189