Nanoscale manipulation of the Mott insulating state coupled to charge order in 1T-TaS2

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作者
Doohee Cho
Sangmo Cheon
Ki-Seok Kim
Sung-Hoon Lee
Yong-Heum Cho
Sang-Wook Cheong
Han Woong Yeom
机构
[1] Center for Artificial Low Dimensional Electronic Systems,Department of Physics
[2] Institute for Basic Science (IBS),Rutgers Center for Emergent Materials and Department of Physics and Astronomy
[3] Pohang University of Science and Technology (POSTECH),undefined
[4] Laboratory for Pohang Emergent Materials and Max Planck POSTECH Center for Complex Phase Materials,undefined
[5] Pohang University of Science and Technology,undefined
[6] Rutgers University,undefined
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摘要
The controllability over strongly correlated electronic states promises unique electronic devices. A recent example is an optically induced ultrafast switching device based on the transition between the correlated Mott insulating state and a metallic state of a transition metal dichalcogenide 1T-TaS2. However, the electronic switching has been challenging and the nature of the transition has been veiled. Here we demonstrate the nanoscale electronic manipulation of the Mott state of 1T-TaS2. The voltage pulse from a scanning tunnelling microscope switches the insulating phase locally into a metallic phase with irregularly textured domain walls in the charge density wave order inherent to this Mott state. The metallic state is revealed as a correlated phase, which is induced by the moderate reduction of electron correlation due to the charge density wave decoherence.
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