Dislocation-Related Photoluminescence in Silicon Implanted with Germanium Ions

被引：0
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作者：
N. A. Sobolev
A. E. Kalyadin
V. I. Sakharov
I. T. Serenkov
E. I. Shek
E. O. Parshin
N. S. Melesov
C. G. Simakin
机构：
[1] Ioffe Institute,
[2] Yaroslavl Branch,undefined
[3] Institute of Physics and Technology,undefined
[4] Russian Academy of Sciences,undefined
来源：
Semiconductors | 2019年 / 53卷
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页码：156 / 159
页数：3
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