Analytical Modeling of a Triple Material Double Gate TFET with Hetero-Dielectric Gate Stack

In this paper, we propose and develop an analytical model of a Triple material double gate Tunnel Field Effect Transistor (TM-DG TFET) with hetero-dielectric gate oxide stack comprising of SiO2 and HfO2. The two-dimensional Poisson’s equation has been solved using parabolic-approximation method to model the channel potential and electric field. Analytical model of drain current is developed by integrating the band-to-band tunneling generation rate over the channel thickness (tsi) and shortest tunneling path (Lmin\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$L_{\min }$\end{document}). A Transconductance model is also developed using this drain current model. The proposed TM-DG TFET also provides better result with reference to input-output characteristics, subthreshold swing, ION/IOFF current ratio and ambipolar effect compared to the dual material double gate (DM-DG) TFET. The analytical model has been validated with the numerical data obtained from commercial TCAD software.