Features of high-power ion beam irradiation of nanoporous Si and SiO2

被引：0
|
作者：
V. S. Kovivchak
R. B. Burlakov
N. A. Davletkil’deev
机构：
[1] Russian Academy of Sciences,Omsk Branch, Institute of Semiconductor Physics, Siberian Branch
[2] Omsk State University,undefined
来源：
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques | 2010年 / 4卷
关键词：
Atomic Force Microscopy Image; Porous Silicon; Porous Layer; Neutron Technique; Porous Silicon Layer;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Nanoporous Si and SiO2 melting observed under high-power ion beam irradiation of nanosecond duration was investigated. The sizes of ellipsoidal particles formed in Si and those of holes formed in SiO2 under irradiation were determined. The possible origin of these morphology features was discussed.
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页码：245 / 247
页数：2
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