Low temperature synthesis of SiC films by vacuum laser ablation and their characterization

被引：0
|
作者：
A. S. Gusev
S. M. Ryndya
N. I. Kargin
E. A. Bondarenko
机构：
[1] Karpov Institute of Physical Chemistry,
[2] Moscow Engineering Physics Institute,undefined
来源：
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques | 2010年 / 4卷
关键词：
Substrate Temperature; Silicon Carbide; Surface Investigation; Neutron Technique; Pulse Laser Ablation;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Thin films of silicon carbide were grown on Si(100) substrate by pulsed laser ablation of powder-pressed target. The influence of substrate temperature on both structure and surface morphology of SiC films was studied by scanning electron microscopy, X-ray diffraction, and IR spectroscopy.
引用
收藏
页码：374 / 378
页数：4
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