Artificial synapses with a sponge-like double-layer porous oxide memristor

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作者
Qin Gao
Anping Huang
Jing Zhang
Yuhang Ji
Jingjing Zhang
Xueliang Chen
Xueli Geng
Qi Hu
Mei Wang
Zhisong Xiao
Paul K. Chu
机构
[1] Beihang University,Key Laboratory of Micro
[2] North China University of Technology,nano Measurement
[3] Tsinghua University,Manipulation and Physics Ministry of Education, Department of Physics
[4] City University of Hong Kong,School of Information Science and Technology
来源
NPG Asia Materials | 2021年 / 13卷
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摘要
Closely following the rapid development of artificial intelligence, studies of the human brain and neurobiology are focusing on the biological mechanisms of neurons and synapses. Herein, a memory system employing a nanoporous double-layer structure for simulation of synaptic functions is described. The sponge-like double-layer porous (SLDLP) oxide stack of Pt/porous LiCoO2/porous SiO2/Si is designed as presynaptic and postsynaptic membranes. This bionic structure exhibits high ON–OFF ratios up to 108 during the stability test, and data can be maintained for 105 s despite a small read voltage of 0.5 V. Typical synaptic functions, such as nonlinear transmission characteristics, spike-timing-dependent plasticity, and learning-experience behaviors, are achieved simultaneously with this device. Based on the hydrodynamic transport mechanism of water molecules in porous sponges and the principle of water storage, the synaptic behavior of the device is discussed. The SLDLP oxide memristor is very promising due to its excellent synaptic performance and potential in neuromorphic computing.
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