Highly efficient THz four-wave mixing in doped silicon

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作者
Nils Dessmann
Nguyen H. Le
Viktoria Eless
Steven Chick
Kamyar Saeedi
Alberto Perez-Delgado
Sergey G. Pavlov
Alexander F. G. van der Meer
Konstantin L. Litvinenko
Ian Galbraith
Nikolay V. Abrosimov
Helge Riemann
Carl R. Pidgeon
Gabriel Aeppli
Britta Redlich
Benedict N. Murdin
机构
[1] Radboud University,Advanced Technology Institute and Department of Physics
[2] Institute for Molecules and Materials,Institute of Photonics and Quantum Sciences, SUPA
[3] HFML-FELIX,Laboratory for Solid State Physics
[4] University of Surrey,Institut de Physique
[5] Institute of Optical Sensor Systems,undefined
[6] German Aerospace Center,undefined
[7] Heriot-Watt University,undefined
[8] Leibniz-Institut für Kristallzüchtung (IKZ),undefined
[9] ETH Zürich,undefined
[10] EPFL,undefined
[11] Paul Scherrer Institute,undefined
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摘要
Third-order non-linearities are important because they allow control over light pulses in ubiquitous high-quality centro-symmetric materials like silicon and silica. Degenerate four-wave mixing provides a direct measure of the third-order non-linear sheet susceptibility χ(3)L (where L represents the material thickness) as well as technological possibilities such as optically gated detection and emission of photons. Using picosecond pulses from a free electron laser, we show that silicon doped with P or Bi has a value of χ(3)L in the THz domain that is higher than that reported for any other material in any wavelength band. The immediate implication of our results is the efficient generation of intense coherent THz light via upconversion (also a χ(3) process), and they open the door to exploitation of non-degenerate mixing and optical nonlinearities beyond the perturbative regime.
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