Mesoscopic variance of dislocation displacements in semiconductor crystals

被引：0
|
作者：
B. V. Petukhov
机构：
[1] Russian Academy of Sciences,Shubnikov Institute of Crystallography
来源：
Semiconductors | 2010年 / 44卷
关键词：
Disloca Tion; Semiconductor Crystal; Dislocation Dynamic; Mesoscopic Level; Profile Width;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
It is shown that a large variance of dislocation displacements found experimentally and the delay in its relaxation to a steady value in semiconductor materials can be explained by the stochastic nature of the dislocation-kink formation. This stochastic nature results in the development of dislocation-line roughness described by the scaling relations, including the mesoscopic time and space scales.
引用
收藏
页码：1258 / 1262
页数：4
相关论文
共 50 条
  • [1] Mesoscopic Variance of Dislocation Displacements in Semiconductor Crystals
    Petukhov, B. V.
    [J]. SEMICONDUCTORS, 2010, 44 (10) : 1258 - 1262
  • [2] Mesoscopic Variance of Dislocation Displacements in Crystalline Materials
    Petukhov, B. V.
    [J]. 11TH INTERNATIONAL CONFERENCE ON THE MECHANICAL BEHAVIOR OF MATERIALS (ICM11), 2011, 10 : 1262 - 1267
  • [3] ON DISLOCATION GENERATION IN SEMICONDUCTOR CRYSTALS
    ALEXANDER, H
    [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1989, 112 (1-2): : 1 - 12
  • [4] Dynamic Atomic Displacements and Athermal Dislocation Glide in Crystals
    Yu. A. Khon
    H. Zapolsky
    [J]. Physics of the Solid State, 2020, 62 : 587 - 591
  • [5] Dynamic Atomic Displacements and Athermal Dislocation Glide in Crystals
    Khon, Yu. A.
    Zapolsky, H.
    [J]. PHYSICS OF THE SOLID STATE, 2020, 62 (04) : 587 - 591
  • [6] Optical conductivity of semiconductor crystals with a screw dislocation
    Taira, Hisao
    Shima, Hiroyuki
    [J]. SOLID STATE COMMUNICATIONS, 2014, 177 : 61 - 64
  • [7] Dislocation mobility and the mechanical response of BCC single crystals: A mesoscopic approach
    Tang, M
    Kubin, LP
    Canova, GR
    [J]. ACTA MATERIALIA, 1998, 46 (09) : 3221 - 3235
  • [8] Threading dislocation densities in semiconductor crystals: A geometric approach
    Bakke, K.
    Moraes, F.
    [J]. PHYSICS LETTERS A, 2012, 376 (45) : 2838 - 2841
  • [9] Methods of dislocation structure characterization in AIIIBV semiconductor single crystals
    Knyazev, Stanislav N.
    Kudrya, Aleksandr V.
    Komarovskiy, Nikita Yu.
    Parkhomenko, Yuri N.
    Molodtsova, Elena V.
    Yushchuk, Vyacheslav V.
    [J]. Modern Electronic Materials, 2022, 8 (04): : 131 - 140
  • [10] Studies on dislocation patterning and bunching in semiconductor compound crystals (GaAs)
    Rudolph, P
    Frank-Rotsch, C
    Juda, U
    Naumann, M
    Neubert, M
    [J]. JOURNAL OF CRYSTAL GROWTH, 2004, 265 (3-4) : 331 - 340
12345