The mode competition, instability, and second harmonic generation in dual-frequency InGaAs/GaAs/InGaP lasers

被引:0
|
作者
V. Ya. Aleshkin
B. N. Zvonkov
S. M. Nekorkin
Vl. V. Kocharovsky
机构
[1] Russian Academy of Sciences,Institute for Physics of Microstructures
[2] Physicotechnical Research Institute at Lobachevsky State University,Institute of Applied Physics
[3] Russian Academy of Sciences,undefined
来源
Semiconductors | 2005年 / 39卷
关键词
Magnetic Material; Electromagnetism; Harmonic Generation; Injection Current; Mode Competition;
D O I
暂无
中图分类号
学科分类号
摘要
InGaAs/GaAs/InGaP-based heterolasers with asymmetrically grown quantum wells of two types are developed. For the first time, dual-wavelength operation and second-harmonic generation are realized in these lasers over a wide range of injection currents: from 0.2 A in CW mode up to 10 A in injection with 200-ns-long pulses. Previously unknown special features of such a generation are experimentally revealed and interpreted in terms of the competition and coexistence of various short-and long-wavelength modes, including the “whispering-gallery” modes.
引用
收藏
页码:156 / 159
页数:3
相关论文
共 50 条
  • [1] The mode competition, instability, and second harmonic generation in dual-frequency InGaAs/GaAs/InGaP lasers
    Aleshkin, VY
    Zvonkov, BN
    Nekorkin, SM
    Kocharovsky, VV
    SEMICONDUCTORS, 2005, 39 (01) : 156 - 159
  • [2] Novel dual-wavelength InGaAs/GaAs/InGaP lasers: Second harmonics and competition of whispering-gallery and standard TE modes
    Aleshkin, VY
    Kocharovsky, VV
    Nekorkin, SM
    Zvonkov, BN
    Zvonkov, NB
    Filatov, DO
    Levichev, VV
    INTERNATIONAL CONFERENCE ON LASERS, APPLICATIONS, AND TECHNOLOGIES 2005: ADVANCED LASERS AND SYSTEMS, 2006, 6054
  • [3] INTRACAVITY DIFFERENCE-FREQUENCY GENERATION IN GAAS/INGAAS/INGAP BUTT-JOINT DIODE LASERS
    Aleshkin, V. Ya.
    Biryukov, A. A.
    Gavrilenko, V. I.
    Dubinov, A. A.
    Kocharovsky, V. V.
    Maremyanin, K. V.
    Morozov, S. V.
    Nekorkin, S. M.
    Zvonkov, B. N.
    CAOL 2008: PROCEEDINGS OF THE 4TH INTERNATIONAL CONFERENCE ON ADVANCED OPTOELECTRONICS AND LASERS, 2008, : 117 - +
  • [4] Efficient generation of the first waveguide mode in the InGaAs/GaAs/InGaP heterolaser
    A. A. Biryukov
    B. N. Zvonkov
    S. M. Nekorkin
    V. Ya. Aleshkin
    A. A. Dubinov
    V. V. Kocharovskiĭ
    Vl. V. Kocharovskiĭ
    Semiconductors, 2008, 42 : 354 - 357
  • [5] Efficient generation of the first waveguide mode in the InGaAs/GaAs/InGaP heterolaser
    Biryukov, A. A.
    Zvonkov, B. N.
    Nekorkin, S. M.
    Aleshkin, V. Ya.
    Dubinov, A. A.
    Kocharovskii, V. V.
    Kocharovskii, Vl. V.
    SEMICONDUCTORS, 2008, 42 (03) : 354 - 357
  • [6] Dual-frequency GaAs/InGaP laser diode with a GaAsSb quantum well
    N. V. Dikareva
    B. N. Zvonkov
    O. V. Vikhrova
    S. M. Nekorkin
    V. Ya. Aleshkin
    A. A. Dubinov
    Semiconductors, 2017, 51 : 1360 - 1363
  • [7] Dual-frequency GaAs/InGaP laser diode with a GaAsSb quantum well
    Dikareva, N. V.
    Zvonkov, B. N.
    Vikhrova, O. V.
    Nekorkin, S. M.
    Aleshkin, V. Ya.
    Dubinov, A. A.
    SEMICONDUCTORS, 2017, 51 (10) : 1360 - 1363
  • [8] Second-harmonic generation of a dual-frequency laser in a MgO:PPLN crystal
    Kang, Ying
    Yang, Suhui
    Brunel, Marc
    Cheng, Lijun
    Zhao, Changming
    Zhang, Haiyang
    APPLIED OPTICS, 2017, 56 (11) : 2968 - 2972
  • [9] Laser Single-Mode Characteristics of InGaAs/GaAs/InGaP Quantum Well Lasers
    Tang Yu
    Cao Chunfang
    Zhao Xuyi
    Yang Jin
    Li Jinyou
    Gong Qian
    Wang Hailong
    LASER & OPTOELECTRONICS PROGRESS, 2019, 56 (13)
  • [10] Theory and simulation of dual-frequency mode-locked lasers
    Farnum, ED
    Butson, L
    Kutz, JN
    JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 2006, 23 (02) : 257 - 264