Dissolution Behavior of Indium in CaO-SiO2-Al2O3 Slag

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作者
Kyu Yeol Ko
Joo Hyun Park
机构
[1] School of Materials Science and Engineering,
[2] University of Ulsan,undefined
关键词
Oxygen Partial Pressure; In2O; Indium Oxide; Dissolution Mechanism; Excess Free Energy;
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摘要
The solubility of indium in a molten CaO-SiO2-Al2O3 system was measured at 1773 K (1500 °C) to establish the dissolution mechanism of indium under a highly reducing atmosphere. The solubility of indium increases with increasing oxygen potential, whereas it decreases with increased activity of basic oxide. Therefore, a dissolution mechanism of indium can be constructed according to the following equation:\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$ {\text{In}}({\text{s}}) + \frac{1}{4}{\text{O}}_{2} ({\text{g}}) = ({\text{In}}^{ + } ) + \frac{1}{2}({\text{O}}^{2 - } ) $$\end{document}
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页码:1224 / 1230
页数:6
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