Hybrid optical-electrical detection of donor electron spins with bound excitons in silicon

被引:0
|
作者
Lo C.C. [1 ,2 ]
Urdampilleta M. [1 ]
Ross P. [1 ]
Gonzalez-Zalba M.F. [3 ]
Mansir J. [1 ]
Lyon S.A. [4 ]
Thewalt M.L.W. [5 ]
Morton J.J.L. [1 ,2 ]
机构
[1] London Centre for Nanotechnology, University College London, London
[2] Department of Electronic and Electrical Engineering, University College London, London
[3] Hitachi Cambridge Laboratory, J. J. Thomson Avenue, Cambridge
[4] Department of Electrical Engineering, Princeton University, Princeton, 08544, NJ
[5] Simon Fraser University, Burnaby, V5A 1S6, BC
基金
英国工程与自然科学研究理事会; 欧洲研究理事会; 美国国家科学基金会;
关键词
D O I
10.1038/nmat4250
中图分类号
学科分类号
摘要
Electrical detection of spins is an essential tool for understanding the dynamics of spins, with applications ranging from optoelectronics and spintronics, to quantum information processing. For electron spins bound to donors in silicon, bulk electrically detected magnetic resonance has relied on coupling to spin readout partners such as paramagnetic defects or conduction electrons, which fundamentally limits spin coherence times. Here we demonstrate electrical detection of donor electron spin resonance in an ensemble by transport through a silicon device, using optically driven donor-bound exciton transitions. We measure electron spin Rabi oscillations, and obtain long electron spin coherence times, limited only by the donor concentration. We also experimentally address critical issues such as non-resonant excitation, strain, and electric fields, laying the foundations for realizing a single-spin readout method with relaxed magnetic field and temperature requirements compared with spin-dependent tunnelling, enabling donor-based technologies such as quantum sensing. © 2015 Macmillan Publishers Limited. All rights reserved.
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页码:490 / 494
页数:4
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