Spin–valley Hall phenomena driven by Van Hove singularities in blistered graphene

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作者
M. Umar Farooq
Arqum Hashmi
Tomoya Ono
Li Huang
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[1] Southern University of Science and Technology,Department of Physics
[2] University of Tsukuba,Center for Computational Sciences
[3] National Institutes for Quantum and Radiological Science and Technology (QST),Kansai Photon Science Institute
[4] Kobe University,Department of Electrical and Electronic Engineering
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摘要
Using first-principles calculations, we investigate the possibility of realizing valley Hall effects (VHE) in blistered graphene sheets. We show that the Van Hove singularities (VHS) induced by structural deformations can give rise to interesting spin–valley Hall phenomena. The broken degeneracy of spin degree of freedom results in spin-filtered VH states and the valley conductivity have a Hall plateau of ±e2/2h, while the blistered structures with time-reversal symmetry show the VHE with the opposite sign of σxyK/K′\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\sigma _{xy}^{K/K^{\prime}}$$\end{document} (e2/2h) in the two valleys. Remarkably, these results show that the distinguishable chiral valley pseudospin state can occur even in the presence of VHS induced spin splitting. The robust chiral spin–momentum textures in both massless and massive Dirac cones of the blistered systems indicate significant suppression of carrier back-scattering. Our study provides a different approach to realize spin-filtered and spin-valley contrasting Hall effects in graphene-based devices without any external field.
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