Numerical analysis of theoretical model of the RF MEMS switches

被引:6
|
作者
Zhang Lixian
Yu Tongxi
Zhao Yapu
机构
[1] Chinese Academy of Sciences,State Key Laboratory of Nonlinear Mechanics (LNM), Institute of Mechanics
[2] Hong Kong University of Science and Technology,Department of Mechanical Engineering
关键词
RF MEMS; axial stretching; residual stress; fringing field; critical pull-in voltage;
D O I
10.1007/BF02484263
中图分类号
学科分类号
摘要
An improved electromechanical model of the RF MEMS (radio frequency microelectromechanical systems) switches is introduced, in which the effects of intrinsic residual stress from fabrication processes, axial stress due to stretching of beam, and fringing field are taken into account. Four dimensionless numbers are derived from the governing equation of the developed model. A semi-analytical method is developed to calculate the behavior of the RF MEMS switches. Subsequently the influence of the material and geometry parameters on the behavior of the structure is analyzed and compared, and the corresponding analysis with the dimensionless numbers is conducted too. The quantitative relationship between the presented parameters and the critical pull-in voltage is obtained, and the relative importance of those parameters is given.
引用
收藏
页码:178 / 184
页数:6
相关论文
共 50 条
  • [1] NUMERICAL ANALYSIS OF THEORETICAL MODEL OF THE RF MEMS SWITCHES
    张立宪
    余同希
    赵亚溥
    Acta Mechanica Sinica, 2004, 20 (02) : 178 - 184
  • [2] Numerical analysis of theoretical model of the RF MEMS switches
    Zhang, LX
    Yu, TX
    Zhao, YP
    ACTA MECHANICA SINICA, 2004, 20 (02) : 178 - 184
  • [3] Electromechanical model of RF MEMS switches
    L. X. Zhang
    Y.-P. Zhao
    Microsystem Technologies, 2003, 9 : 420 - 426
  • [4] Electromechanical model of RF MEMS switches
    Zhang, LX
    Zhao, YP
    MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS, 2003, 9 (6-7): : 420 - 426
  • [5] THE ANALYSIS OF RF MEMS SWITCHES FOR MECHANICAL RELIABILITY
    Wu, Jianshu
    Liu, Xiaoming
    Zhu, Zhonggan
    14TH ISSAT INTERNATIONAL CONFERENCE ON RELIABILITY AND QUALITY IN DESIGN, PROCEEDINGS, 2008, : 122 - 126
  • [6] MEMS technology for RF switches
    Giacomozzi, F
    Lorenzelli, L
    Margesin, B
    Turco, G
    Marcelli, R
    SENSORS AND MICROSYSTEMS, PROCEEDINGS, 2004, : 392 - 397
  • [7] Modeling of RF MEMS switches
    Robertson, B
    Ho, FD
    Hudson, T
    MEMS COMPONENTS AND APPLICATIONS FOR INDUSTRY, AUTOMOBILES, AEROSPACE, AND COMMUNICATION, 2001, 4559 : 112 - 119
  • [8] Novel RF MEMS Switches
    Lucyszyn, S.
    Pranonsatit, S.
    Choi, J. Y.
    Moseley, R. W.
    Yeatman, E. M.
    Holmes, A. S.
    2007 ASIA PACIFIC MICROWAVE CONFERENCE, VOLS 1-5, 2007, : 338 - +
  • [9] Performance analysis and comparison of semiconductor and RF MEMS switches
    College of Telecommunication Engineering, Beijing University of Posts and Telecommunications, Beijing 100876, China
    不详
    Liaoning Gongcheng Jishu Daxue Xuebao (Ziran Kexue Ban), 2006, 4 (574-577):
  • [10] Analysis of pull-in voltage of RF MEMS switches
    Dong, Qiaohua
    Liao, Xiaoping
    Huang, Qing'an
    Huang, Jianqiu
    Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors, 2008, 29 (01): : 163 - 167