Key role of lattice symmetry in the metal-insulator transition of NdNiO3 films

被引:0
|
作者
Jack Y. Zhang
Honggyu Kim
Evgeny Mikheev
Adam J. Hauser
Susanne Stemmer
机构
[1] University of California,Materials Department
来源
关键词
D O I
暂无
中图分类号
学科分类号
摘要
Bulk NdNiO3 exhibits a metal-to-insulator transition (MIT) as the temperature is lowered that is also seen in tensile strained films. In contrast, films that are under a large compressive strain typically remain metallic at all temperatures. To clarify the microscopic origins of this behavior, we use position averaged convergent beam electron diffraction in scanning transmission electron microscopy to characterize strained NdNiO3 films both above and below the MIT temperature. We show that a symmetry lowering structural change takes place in case of the tensile strained film, which undergoes an MIT, but is absent in the compressively strained film. Using space group symmetry arguments, we show that these results support the bond length disproportionation model of the MIT in the rare-earth nickelates. Furthermore, the results provide insights into the non-Fermi liquid phase that is observed in films for which the MIT is absent.
引用
收藏
相关论文
共 50 条
  • [1] Key role of lattice symmetry in the metal-insulator transition of NdNiO3 films
    Zhang, Jack Y.
    Kim, Honggyu
    Mikheev, Evgeny
    Hauser, Adam J.
    Stemmer, Susanne
    SCIENTIFIC REPORTS, 2016, 6
  • [2] Tuning the Metal-Insulator transition in NdNiO3 thin films
    Shiyani, T.
    Shekhada, K. G.
    Savaliya, C. R.
    Markna, J. H.
    FUNCTIONAL OXIDES AND NANOMATERIALS, 2017, 1837
  • [3] Heterogeneous nucleation and metal-insulator transition in epitaxial films of NdNiO3
    Kumar, Devendra
    Rajeev, K. P.
    Kushwaha, A. K.
    Budhani, R. C.
    JOURNAL OF APPLIED PHYSICS, 2010, 108 (06)
  • [4] Raman study of metal-insulator transition in NdNiO3 thin films
    Zaghrioui, M
    Bulou, A
    Laffez, P
    Lacorre, P
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2000, 211 (1-3) : 238 - 242
  • [5] Role of magnetic and orbital ordering at the metal-insulator transition in NdNiO3
    Scagnoli, V
    Staub, U
    Mulders, AM
    Janousch, M
    Meijer, GI
    Hammerl, G
    Tonnerre, JM
    Stojic, N
    PHYSICAL REVIEW B, 2006, 73 (10)
  • [6] Metal-insulator transitions in NdNiO3 thin films
    Catalan, G
    Bowman, RM
    Gregg, JM
    PHYSICAL REVIEW B, 2000, 62 (12) : 7892 - 7900
  • [7] Microstructure and metal-insulator transition of NdNiO3 thin films on various substrates
    Laffez, P.
    Zaghrioui, M.
    Monot, I.
    Brousse, T.
    Lacorre, P.
    Thin Solid Films, 1999, 354 (01): : 50 - 54
  • [8] Strain controlled metal-insulator transition in epitaxial NdNiO3 thin films
    Xiang, P. -H.
    Zhong, N.
    Duan, C. -G.
    Tang, X. D.
    Hu, Z. G.
    Yang, P. X.
    Zhu, Z. Q.
    Chu, J. H.
    JOURNAL OF APPLIED PHYSICS, 2013, 114 (24)
  • [9] Microstructure and metal-insulator transition of NdNiO3 thin films on various substrates
    Laffez, P
    Zaghrioui, M
    Monot, I
    Brousse, T
    Lacorre, P
    THIN SOLID FILMS, 1999, 354 (1-2) : 50 - 54
  • [10] Probing the metal-insulator transition of NdNiO3 by electrostatic doping
    Son, Junwoo
    Jalan, Bharat
    Kajdos, Adam P.
    Balents, Leon
    Allen, S. James
    Stemmer, Susanne
    APPLIED PHYSICS LETTERS, 2011, 99 (19)