Transport properties of InAs epilayers grown on GaAs substrates by using the prelayer technique

被引：0
|
作者：
L. C. Cai
H. Chen
C. L. Bao
Q. Huang
J. M. Zhou
机构：
[1] Chinese Academy of Sciences,Institute of Physics
来源：
Journal of Materials Science | 2004年 / 39卷
关键词：
Polymer; GaAs; Transport Property; GaAs Substrate;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
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页码：2637 / 2640
页数：3
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