The role of H-plasma on aluminum-induced crystallization of amorphous silicon

被引：0
|
作者：
Juan Li
Chong Luo
Hoi Sing Kwok
机构：
[1] Nankai University,The Tianjin Key Laboratory for Photo
[2] The Hong Kong University of Science and Technology,Electronic Thin Film Devices and Technology, Institute of Photo
来源：
Applied Physics A | 2014年 / 116卷
关键词：
Rapid Thermal Annealing; Hall Mobility; Crystalline Volume Fraction; Solid Phase Crystallization; Laser Crystallization;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
We propose a technique to improve and accelerate aluminum-induced crystallization (AIC) by hydrogen plasma. Raman spectroscopy and secondary ion mass spectrometry of crystallized poly-silicon thin films show that hydrogen plasma radicals reduce the crystallization time of AIC. This technique shortens the annealing time from 10 to 4 h and increases the Hall mobility from 22 to 42 cm2/V s. The possible mechanism of AIC assisted by hydrogen radicals is also discussed.
引用
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页码：851 / 855
页数：4
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