The structural, electronic and thermodynamic properties of LaRuX (X = Si, Ge) compounds

被引:0
|
作者
Shahrzad Talakesh
机构
[1] Islamic Azad University,Department of Physics, Faculty of Sciences, Mobarakeh Branch
来源
Indian Journal of Physics | 2021年 / 95卷
关键词
Density functional theory; Hubbard parameter; Electron density of states; Thermodynamic properties;
D O I
暂无
中图分类号
学科分类号
摘要
The structural, electronic and thermodynamic properties of LaRuX (X = Si, Ge) compounds are investigated using density functional theory by the Wien2k code. Using the first-principles procedure, the Hubbard parameter of La 5d electrons and Ru 4d electrons of LaRuX (X = Si, Ge) compounds is calculated. In these calculations, the exchange–correlation potential is calculated using the generalized gradient approximation (GGA) and generalized gradient approximation plus Hubbard parameter (GGA + U). The calculated results indicate that LaRuX (X = Si, Ge) compounds are stable in the nonmagnetic phase. The electron density of states and band structure of LaRuX (X = Si, Ge) compounds within GGA and GGA + U approaches in the presence of spin orbit coupling are calculated. The obtained results of the electronic band structure show that LaRuX (X = Si, Ge) compounds have metallic behavior. Furthermore, thermodynamic properties of LaRuX (X = Si, Ge) compounds using the quasi-harmonic Debye model within GGA and GGA + U approaches are investigated.
引用
收藏
页码:2615 / 2625
页数:10
相关论文
共 50 条
  • [1] The structural, electronic and thermodynamic properties of LaRuX (X = Si, Ge) compounds
    Talakesh, Shahrzad
    INDIAN JOURNAL OF PHYSICS, 2021, 95 (12) : 2615 - 2625
  • [2] Structural, electronic, mechanical, and thermoelectric properties of LiTiCoX (X = Si, Ge) compounds
    Singh, Jaspal
    Kaur, Kulwinder
    Khandy, Shakeel Ahmad
    Dhiman, Shobhna
    Goyal, Megha
    Verma, S. S.
    INTERNATIONAL JOURNAL OF ENERGY RESEARCH, 2021, 45 (11) : 16891 - 16900
  • [3] Structural, electronic, and magnetic properties of CrMnX (X = Ge, Se, Si, and Sn) compounds
    Ahmed, Shabbir
    Shakil, M.
    Zafar, Muhammad
    Choudhary, M. A.
    Iqbal, T.
    CANADIAN JOURNAL OF PHYSICS, 2020, 98 (03) : 291 - 296
  • [4] Structural, elastic, electronic and transport properties of CoVX (X = Ge and Si) compounds: A DFT prediction
    Chibani, S.
    Chami, N.
    Arbouche, O.
    Amara, K.
    Kafi, A.
    COMPUTATIONAL CONDENSED MATTER, 2020, 24
  • [5] Structural and electronic properties of Si/Ge nanoparticles
    Asaduzzaman, Abu Md.
    Springborg, Michael
    PHYSICAL REVIEW B, 2006, 74 (16):
  • [6] Theoretical prediction of the structural and electronic properties of pseudocubic X3As4 (X = C, Si, Ge and Sn) compounds
    Charifi, Z.
    Baaziz, H.
    Hamad, B.
    PHYSICA B-CONDENSED MATTER, 2009, 404 (12-13) : 1632 - 1637
  • [7] Structural, Electronic, Magnetic, Elastic, Thermodynamic, and Thermoelectric Properties of the Half-Heusler RhFeX (with X = Ge, Sn) Compounds
    M. A. Bennani
    Z. Aziz
    S. Terkhi
    E. H. Elandaloussi
    B. Bouadjemi
    D. Chenine
    M. Benidris
    O. Youb
    S. Bentata
    Journal of Superconductivity and Novel Magnetism, 2021, 34 : 211 - 225
  • [8] Structural, Electronic, Magnetic, Elastic, Thermodynamic, and Thermoelectric Properties of the Half-Heusler RhFeX (with X = Ge, Sn) Compounds
    Bennani, M. A.
    Aziz, Z.
    Terkhi, S.
    Elandaloussi, E. H.
    Bouadjemi, B.
    Chenine, D.
    Benidris, M.
    Youb, O.
    Bentata, S.
    JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM, 2021, 34 (01) : 211 - 225
  • [9] Theoretical prediction of the structural, elastic, electronic and thermodynamic properties of V3M (M = Si, Ge and Sn) compounds
    Chihi, T.
    Fatmi, M.
    SUPERLATTICES AND MICROSTRUCTURES, 2012, 52 (04) : 697 - 703
  • [10] First principles study of the structural, electronic, optical, elastic and thermodynamic properties of CdXAs2 (X=Si, Ge and Sn)
    Sharma, Sheetal
    Verma, A. S.
    Bhandari, R.
    Kumari, Sarita
    Jindal, V. K.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2014, 27 : 79 - 96