Growth-Induced In-Plane Uniaxial Anisotropy in V2O3/Ni Films

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作者
Dustin A. Gilbert
Juan Gabriel Ramírez
T. Saerbeck
J. Trastoy
Ivan K. Schuller
Kai Liu
J. de la Venta
机构
[1] Physics Department,
[2] University of California,undefined
[3] Davis,undefined
[4] NIST Center for Neutron Research,undefined
[5] Department of Physics,undefined
[6] Universidad de los Andes,undefined
[7] Institut Laue-Langevin,undefined
[8] 71 Av. Des Martyrs,undefined
[9] CS 20156,undefined
[10] Physics Department,undefined
[11] University of California,undefined
[12] San Diego,undefined
[13] Physics Department,undefined
[14] Colorado State University,undefined
[15] Fort Collins,undefined
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摘要
We report on a strain-induced and temperature dependent uniaxial anisotropy in V2O3/Ni hybrid thin films, manifested through the interfacial strain and sample microstructure, and its consequences on the angular dependent magnetization reversal. X-ray diffraction and reciprocal space maps identify the in-plane crystalline axes of the V2O3; atomic force and scanning electron microscopy reveal oriented rips in the film microstructure. Quasi-static magnetometry and dynamic ferromagnetic resonance measurements identify a uniaxial magnetic easy axis along the rips. Comparison with films grown on sapphire without rips shows a combined contribution from strain and microstructure in the V2O3/Ni films. Magnetization reversal characteristics captured by angular-dependent first order reversal curve measurements indicate a strong domain wall pinning along the direction orthogonal to the rips, inducing an angular-dependent change in the reversal mechanism. The resultant anisotropy is tunable with temperature and is most pronounced at room temperature, which is beneficial for potential device applications.
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