Epitaxial growth and properties of MgxZn1-xO films produced by pulsed laser deposition

被引：0
|
作者：
A. A. Lotin
O. A. Novodvorsky
E. V. Khaydukov
V. N. Glebov
V. V. Rocheva
O. D. Khramova
V. Ya. Panchenko
C. Wenzel
N. Trumpaicka
K. D. Chtcherbachev
机构：
[1] Russian Academy of Sciences,Institute on Laser and Information Technologies
[2] University of Technology,Institute of Semiconductor and Microsystems Technology
[3] Moscow State Institute of Steel and Alloys (Technological University),undefined
来源：
Semiconductors | 2010年 / 44卷
关键词：
Atomic Force Microscopy; Zinc Oxide; Pulse Laser Deposition; Epitaxial Growth; Crystal Lattice Parameter;
D O I：
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中图分类号：
学科分类号：
摘要：
The MgxZn1-xO thin films with a Mg content corresponding to x = 0–0.45 are grown by pulsed laser deposition on ablation of ceramic targets. The conditions for epitaxial growth of the films on the single-crystal Al2O3 (00.1) substrates are established. The record limit of solubility of Mg in hexagonal ZnO, x = 35 is attained. In this case, the lattice mismatch for the parameter a of the ZnO and Mg0.35Zn0.65O films does not exceed 1%, whereas the band gaps of the films differ by 0.78 eV. The surface roughness of the films corresponds to 0.8–1.5 nm in the range of x = 0–0.27.
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页码：246 / 250
页数：4
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