Intraband transitions in magnetoexcitons in coupled double quantum wells

A theory of far-infrared (FIR) magneto-optical intraband s→p± transitions of direct and indirect excitons in semiconductor coupled double quantum wells has been developed. The case of symmetric strained InxGa1−xAs/GaAs quantum wells with nondegenerate valence band in the regime of both narrow and wide barriers has been analyzed. The energies and dipole matrix elements of transitions between the ground s and excited p± states in a quantizing magnetic field B>2 T and electric field ℰ perpendicular to the quantum well plane have been studied. The regimes of direct (in a weak electric field) and indirect (in a strong electric field) transitions, and the transition between the direct and indirect regimes, have been investigated.