A 1.8-V 0.7 ppm/°C high order temperature-compensated CMOS current reference

被引:0
|
作者
Yang Lu
Bo Zhang
机构
[1] University of Electronics Science and Technology of China,School of Micro
关键词
CMOS; Bandgap current reference; Curvature-compensated; Temperature-compensation; Temperature coefficient;
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学科分类号
摘要
A high order curvature compensation technique for current reference generator which exploits the I–V characteristic of MOS to achieve ISC (Tm) (m ≥ 2) is described. ISC (Tm) is a self-compensated current which corrects its negative three-order TC (Temperature Coefficient) and linear TC by itself. Then, I (T2) is achieved also by exploiting the I–V characteristic of MOS, for correcting the other negative high order parts of ISC (Tm). This circuit operates on a 1.8 V power supply and is compatible with a standard n-well 0.5-μm digital CMOS process. The circuit realizes a temperature coefficient of 0.7 ppm/°C, a deviation of the simulated output current of 0.011% from −20°C to + 150°C and 97.5 dB PSRR through HSPICE simulation.
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页码:175 / 179
页数:4
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