Nonuniform current distribution between individual layers of multilayer MoS2, experimentally approached by using a laser thinning technique

We have investigated the current distribution between individual layers of multilayer MoS2 in a field-effect transistor structure with source and drain electrodes on the top layer. By employing a laser thinning technique, we partially etched down the multilayer in the middle of the device and monitored the electrical current after each etching step. The current was decreased by several orders of magnitude when the upper layers were partially etched away. Our observation suggests that the electrical current of multilayer MoS2 flows mainly through the upper layers close to the source/drain contacts due to relatively large interlayer resistance of MoS2.