Anisotropy of long-wavelength optical phonons in GaAs/AlAs superlattices

被引：0
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作者：
V. A. Volodin
M. P. Sinyukov
机构：
[1] Russian Academy of Sciences,Rzhanov Institute of Semiconductor Physics, Siberian Branch
[2] Novosibirsk State University,undefined
来源：
JETP Letters | 2014年 / 99卷
关键词：
GaAs; Wave Vector; JETP Letter; Optical Phonon; GaAs Layer;
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摘要：
The angular anisotropy of optical phonons in GaAs/AlAs (001) superlattices is investigated by Raman scattering spectroscopy. Scattering configurations allowed for phonons with wave vectors oriented along the superlattice layers and normally to them are used. For phonons localized in GaAs layers, the theoretically predicted mixing of the LO1 longitudinal modes with TO1 transverse modes in which atomic displacements occur along the normal to the superlattice is observed experimentally. These modes possess noticeable angular anisotropy. For transverse modes in which atoms move in the plane of the superlattice, the angular anisotropy is small.
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页码：396 / 399
页数：3
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