Recombination of silicon ions by electron capture from atomic hydrogen and helium

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作者
M. C. Bacchus-Montabonel
机构
[1] Laboratoire de Spectrométrie Ionique et Moléculaire (UMR 5579),
[2] CNRS et Université Lyon I,undefined
[3] 43 Bd du 11 Novembre 1918,undefined
[4] 69622 Villeurbanne Cedex,undefined
[5] France,undefined
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Key words: Electron capture; Silicon ions;
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 Ab initio potential-energy curves and coupling matrix elements of the Σ and Π molecular states involved in the collision of the Si2+, Si3+ and Si4+ multicharged ions on atomic hydrogen and helium have been determined by means of configuration interaction methods. The total and partial electron capture cross sections have been determined using a semiclassical or a quantal approach in the 0.002–0.1 au velocity range. A detailed comparison with very recent theoretical and experimental rate coefficient results is made.
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页码:296 / 301
页数:5
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