Phase Separation in GaMnAs Layers Grown by Laser Pulsed Deposition

被引:4
|
作者
Kun'kova, Z. E. [1 ]
Gan'shina, E. A. [2 ]
Golik, L. L. [1 ]
Danilov, Yu. A. [3 ]
Kudrin, A. V. [3 ]
Kovalev, V. I. [1 ]
Zykov, G. S. [2 ]
Markin, Yu. V. [1 ]
Vikhrova, O. V. [3 ]
Zvonkov, B. N. [3 ]
机构
[1] Russian Acad Sci, Kotelnikov Inst Radioengn & Elect, Fryazino, Russia
[2] Moscow MV Lomonosov State Univ, Moscow, Russia
[3] Lobachevsky Nizhny Novgorod State Univ, Nizhnii Novgorod, Russia
基金
俄罗斯基础研究基金会;
关键词
MAGNETOOPTICAL SPECTRA; SEMICONDUCTORS; GAAS; ABLATION;
D O I
10.1134/S1063783418050153
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
GaMnAs layers grown by pulsed laser deposition were studied by magneto-optical transversal Kerr effect spectroscopy, spectral ellipsometry, resistivity and the Hall effect measurements, and magnetometry. The growth regimes for magnetically inhomogeneous layers containing Mn-enriched ferromagnetic regions with different composition and sizes were established. The layers grown at a temperature of 300A degrees C exhibit a ferromagnetic behavior at temperatures below 80 K, which is conditioned by the presence of local ferromagnetic (Ga,Mn)As regions in the paramagnetic matrix. The nature of peculiarities in the TKE spectrum of these layers is discussed.
引用
收藏
页码:943 / 949
页数:7
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