Density Control of InP/GaInP Quantum Dots Grown by Metal-Organic Vapor-Phase Epitaxy

被引：0

作者：

D. V. Lebedev

N. A. Kalyuzhnyy

S. A. Mintairov

K. G. Belyaev

M. V. Rakhlin

A. A. Toropov

P. Brunkov

A. S. Vlasov

J. Merz

S. Rouvimov

S. Oktyabrsky

M. Yakimov

I. V. Mukhin

A. V. Shelaev

V. A. Bykov

A. Yu. Romanova

P. A. Buryak

A. M. Mintairov

机构：

[1] Ioffe Institute,Institute for Materials

[2] University of Notre Dame,undefined

[3] State University of New York at Albany,undefined

[4] St. Petersburg Academic University,undefined

[5] NT-MDT Spectrum Instruments,undefined

[6] St. Petersburg Polytechnical University,undefined

来源：

Semiconductors | 2018年 / 52卷

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摘要：

We investigated structural and emission properties of self-organized InP/GaInP quantum dots (QD) grown by metal organic chemical vapor deposition using an amount of deposited In from 7 to 2 monolayers (ML). In the uncapped samples, using atomic force microscopy (AFM), we observed lateral sizes of 100–200 nm, together with a bimodal height distribution having maxima at ∼5 and ∼15 nm, which we denoted as QDs of type A and B, respectively; and reduction of the density of the type-B dots from 4.4 to 1.6 μm–2. The reduction of the density of B-type dots were observed also using transmission electron microscopy of the capped samples. Using single dot low-temperature photoluminescence (PL) spectroscopy we demonstrated effects of Wigner localization for the electrons accumulated in these dots.

引用

页码：497 / 501

页数：4

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[1] Density Control of InP/GaInP Quantum Dots Grown by Metal-Organic Vapor-Phase Epitaxy
Lebedev, D. V.
Kalyuzhnyy, N. A.
Mintairov, S. A.
Belyaev, K. G.
Rakhlin, M. V.
Toropov, A. A.
Brunkov, P.
Vlasov, A. S.
Merz, J.
Rouvimov, S.
Oktyabrsky, S.
Yakimov, M.
Mukhin, I. V.
Shelaev, A. V.
Bykov, V. A.
Romanova, A. Yu.
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