Imaging traps in oxide semiconductors with the aid of thermostimulated electron emission

被引：0
|
作者：
S. N. Nagornykh
V. I. Pavlenkov
机构：
[1] Nizhni Novgorod State Pedagogical University,
[2] Arzamas State Pedagogical University,undefined
来源：
Technical Physics Letters | 2005年 / 31卷
关键词：
Oxide; Oxide Layer; Point Defect; Surface Oxide; Electron Emission;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The patterns of thermostimulated electron emission from an iron-nickel alloy reveal fluctuations in the density of charged point defects in the surface oxide layer of the alloy sample.
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页码：600 / 602
页数：2
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