Resistive switching characteristics and conducting nanobits of polycrystalline NiO thin films

被引：0
|
作者：
Yoonho Ahn
Joonkyung Jang
Jong Yeog Son
机构：
[1] Kyung Hee University,Department of Applied Physics
[2] Pusan National University,Department of Nanoenergy Engineering
来源：
Journal of Electroceramics | 2017年 / 38卷
关键词：
NiO; Thin film; Polycrystalline; Resistive random access memory; Atomic force microscope;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Thin films of NiO were deposited on Pt/Ta/glass sub-strates using a radio frequency (RF) sputtering method. The NiO thin films showed polycrystalline nature, indicating preferentially (111)-oriented structure. The resistive random access memory (RRAM) capacitor of a Pt/NiO/Pt structure exhibited unipolar switching characteristics and bistable resistivities for 200 repeated switching cycles. Furthermore, RRAM nanobits array was formed on the NiO thin films by applying a bias. The RRAM nanobits had a diameter of approximately 8 nm and were observed via a conducting atomic force microscope (CAFM). The density of the RRAM nanobits array was estimated to be approximately 0.64 Tbit/cm2.
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页码：100 / 103
页数：3
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