InAsSb light-emitting diodes for the detection of CO2 (λ=4.3 μm)

被引：0
|
作者：
A. A. Popov
M. V. Stepanov
V. V. Sherstnev
Yu. P. Yakovlev
机构：
[1] Russian Academy of Sciences,A. F. Ioffe Physicotechnical Institute
来源：
Technical Physics Letters | 1998年 / 24卷
关键词：
Dioxide; Carbon Dioxide; Absorption Band; Buffer Layer; Optical Power;
D O I：
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中图分类号：
学科分类号：
摘要：
The main characteristics of room-temperature light-emitting diodes (λ=4.3 μm) based on InAsSbP/InAsSb/InAsSbP III–V semiconductor heterostructures with a variable-gap buffer layer are reported. An optical power P=0.85 mW was achieved with a pulse length of ∼5 μs and 1 kHz repetition frequency. Conditions for maximizing the power of the light-emitting diodes are indicated. An example is given of the use of these diodes to detect carbon dioxide using the 4.3 μm fundamental absorption band.
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页码：596 / 598
页数：2
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