Formation of an Oxide Surface Layer and Its Influence on the Growth of Epitaxial Silicon Nanowires

被引：0
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作者：
V. A. Nebolsin
N. A. Swaikat
A. Yu. Vorobiev
T. A. Perepechina
L. V. Ozhogina
机构：
[1] Voronezh State Technical University,
来源：
Semiconductors | 2021年 / 55卷
关键词：
nanowires; silicon; growth; oxide layer;
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学科分类号：
摘要：
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页码：771 / 779
页数：8
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