Method for predicting the effects of radiative relaxation in bipolar integrated circuits

被引：0
|
作者：
Panyushkin N.N. [1 ]
Matveev N.N. [1 ]
机构：
[1] Morozov State University of Forestry Engineering, Voronezh
来源：
Bulletin of the Russian Academy of Sciences: Physics | 2016年 / 80卷 / 9期
关键词：
D O I：
10.3103/S1062873816090343
中图分类号：
学科分类号：
摘要：
A method for parametrically predicting the level of non-malfunction work for bipolar integrated circuits under the effects of pulsed gamma neutron radiation with allowance for the relaxation of short-term displacement effects is proposed. The parameters that determine the production margins and radiation sensitivity of parameter UOL (i.e., the low-level output voltage, the degradation of which generally determines the radiation resistance of bipolar digital integrated circuits) were selected as the ones used in predictions. © 2016, Allerton Press, Inc.
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页码：1152 / 1154
页数：2
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